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A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process
  • 所属机构名称：北京大学
  • 会议名称：Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • 时间：2013
  • 成果类型：会议
  • 相关项目：纳米尺度SOI器件ESD工艺方法、模型模拟和器件结构研究
作者： Yuan Wang|Guangyi Lu|Jian Cao|Qi Liu|Ganggang Zhang|Xing Zhang|
同会议论文项目
纳米尺度SOI器件ESD工艺方法、模型模拟和器件结构研究
期刊论文 4 会议论文 9
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