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Mg-doping influence on p-InGaN/GaN Superlattices as Capping Layer for LED
  • 所属机构名称：北京大学
  • 会议名称：Asia-Pacific Workshop on Widegap Semiconductors 2009
  • 成果类型：会议
  • 会场：张家界
  • 相关项目：氮化镓基量子异质结构和发光性质
作者： L. Liu|D. Li|N. Y. Liu|L. Wang|G. Y. Zhang|X. D. Hu|
同会议论文项目
氮化镓基量子异质结构和发光性质
期刊论文 21 会议论文 9
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