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Simulation of correlated line-edge roughness in multi-gate devices
  • 所属机构名称：北京大学
  • 会议名称：18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
  • 时间：2013
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Jiang, Xiaobo|Wang, Runsheng|Huang, Ru|Chen, Jiang|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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