位置：成果数据库 > 会议 > 会议详情页
Simulation Study on Dopant Fluctuation Impact on SRG MOSFET Device and Circuit Performance
  • 所属机构名称：天津大学
  • 会议名称：NSTI-Nanotech 2014
  • 时间：2014.6
  • 成果类型：会议
  • 相关项目：90纳米以下高性能CMOS图像传感器关键技术研究
作者： Hao Wang|Jin He|Ying Liu|Caixia Du|Qingxing He|Yun Ye|Wei Zhao|Wen Wu|Wenping Wang|
同会议论文项目
90纳米以下高性能CMOS图像传感器关键技术研究
期刊论文 82 会议论文 12 专利 33
同项目会议论文
Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Applicat
Design and Optimization of Four-Transistor Pixel for Low Image Lag CMOS Image Sensor
A numerical study on THZ-wave generation and detection of metal-oxide-semiconductor field-effect tra
Lag free transfer transistor in CMOS image sensor pixel with a non-uniform doped gate
Analysis of noise of current accumulator in Time-Delay-Integration CMOS image sensor
Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation
Active pixel CMOS image sensor with single transistor architecture
A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation
Design based on two-frame composition for high dynamic range CMOS image sensor
Distortion Analysis and Calculation of Wide-band Track and Hold Amplifier
Analog/RF performance analysis of coaxial carbon nanotube MOSFET from non-equilibrium green';s