位置：成果数据库 > 会议 > 会议详情页
ESD Detection Circuit with Reverse-used RC Network in a 90-nm CMOS Process
  • 所属机构名称：复旦大学
  • 会议名称：IEEE IFPA
  • 时间：2013.7.7
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： Zhaonian Yang|Hongxia Liu|Shulong Wang|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
同项目会议论文
An Empirical Model for Static I-V Characteristics of Double Gate Tunneling Field Effect Transistor
Random Dopant Fluctuation Effects on Double Gate Tunneling FET Performance
A Modified ESD Clamp Circuit for 90-nm CMOS Process
Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric
Fault Diagnosis of Analog Circuits Based on Multi-frequency Test and Neural Network Method
Analytical Drain Current Model for Organic Thin-Film Transistors
Investigation of Electrical Characteristics of NdAlO3/SiO2 Stack Gate
Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric
Effect of Structural Parameters on the Performance and Variations of Nanosizes PNIN Tunneling Field
Investigations of Fin Vertical Nonuniformity Effects on Junctinless Multigate Transistor
Investigation of Tunneling Field Effect Transistor Reliability
An Improved Design of Si PNIN Tunneling Field Effect Transistor
Forward Gated-Diode Method for Extracting Gate Oxide Thickness and Body Doping Concentration
Logarithm Cofactor Difference Extrema of MOS Devices’ Post-Breakdown Current and Application t
A Novel Simulation Technology of Fin-width Line Edge Roughness Effects in FinFETs
Investigation of Schottky Junction and MOS Technology for III-V Compound Semiconductor MOSFET Applic
Conduction Mechanism of Self-Rectifying n+Si-HfO2-Ni RRAM
A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors
Multi-frequency Test for Analog Circuits
Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET
Simulation on Random Dopant Fluctuation Effect Impact on Double Gate MOSFET and Corresponding 6-T SR
A Charge Based Non-Quasi-Static Transient Medel for SOI MOSFETs
Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Sim
Field-Based Parasitic Capacitance Models for 2D and 3D sub-45-nm Interconnect
Reliability of Inversion Channel InGaAs n-MOSFETs
A Reliability Model for CMOS Circuit Based on Device Degradation