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Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
  • 所属机构名称：北京大学
  • 会议名称：Intionational Symposium on Integrated Circuits (ISIC)
  • 时间：2014.12.10
  • 成果类型：会议
  • 相关项目：用于亚40纳米先进金氧半绝缘体上硅技术的精简模型研究
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用于亚40纳米先进金氧半绝缘体上硅技术的精简模型研究
期刊论文 10 会议论文 9
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