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A Novel ESD Protection Circuit Applied in High-speed CMOS IC
  • 所属机构名称：西安电子科技大学
  • 会议名称：9th International Conference on Solid-State and Integrated-Circuit Technology
  • 成果类型：会议
  • 会场：Beijing, PEOPLES R CHINA
  • 相关项目：半导体器件与电路的“响应型”损伤机理与实验研究
作者： Chai, Changchun|Yang, Yintang|Zhang, Bing|
同会议论文项目
半导体器件与电路的“响应型”损伤机理与实验研究
期刊论文 34 会议论文 7 专利 2
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