位置：成果数据库 > 会议 > 会议详情页
Optical Analysis of InGaN/GaN Multi-Quantum Well for Blue Laser Applications
  • 所属机构名称：北京大学
  • 会议名称：The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
  • 成果类型：会议
  • 会场：北京
  • 相关项目：氮化镓基量子异质结构和发光性质
作者： Z. C. Feng|Y. C. Lee|C. H. Huang|L. Liu|X. D. Hu|
同会议论文项目
氮化镓基量子异质结构和发光性质
期刊论文 21 会议论文 9
同项目会议论文
Electrical and optical study of Al0.2Ga0.8N/GaN superlattice with and without AlN interlayer grown b
Low temperature cathodoluminescence investigation of the strain relaxtion in prestrained InGaN/GaN q
GaN Quantum Dots in p-AlGaN/GaN superlatices without intentional wetting layer
Improvement of electrical properties of p-type Al0.14Ga0.86N/GaN superlattices by inserting an AlN i
Analysis of Mg acceptors activation property in strain modulated AlGaN/GaN superlattices with AlN in
A self-limiting ion erosion technology to open window on the GaN-LD ridge
Mg-doping influence on p-InGaN/GaN Superlattices as Capping Layer for LED
Analysis of the blocking effect on threading dislocations by n-type GaN/AlGaN superlattices