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Optimization of HfO2 growth process by atomic layer deposition (ALD) for high performance charge tra
所属机构名称:中国科学院微电子研究所
会议名称:China Semiconductor Technology International Conference 2013, CSTIC 2013
时间:2013
成果类型:会议
相关项目:新型微电子器件集成的基础研究
同会议论文项目
新型微电子器件集成的基础研究
期刊论文 98
会议论文 12
同项目会议论文
Cu BEOL Compatible Selector with High Selective (>107), Extremely Low Off-current (~pA) and High
Temperature dependent magnetic properties of Co-P films
Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memor
Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-ba
Process optimization of HfAlO trapping layer for high performance charge trap flash memory applicati
Visualization on charge distribution behavior in thickness-scalable HfO2 trapping layer by in-situ e
Self-rectifying bistable resistor for advanced memory application
Gate induced resistive switching in 1T1R structure with improved uniformity and better data retentio
Ultra-low RESET current RRAM device by side-RESET operation method
Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application
Statistical approach to the RESET switching of the HfO2-based solid electrolyte memory