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Low temperature cathodoluminescence investigation of the strain relaxtion in prestrained InGaN/GaN q
  • 所属机构名称：北京大学
  • 会议名称：The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
  • 成果类型：会议
  • 会场：北京
  • 相关项目：氮化镓基量子异质结构和发光性质
作者： Rui Li|Lei Liu|Xiaodong Hu|Lei Wang|Ningyang Liu|Ding Li|
同会议论文项目
氮化镓基量子异质结构和发光性质
期刊论文 21 会议论文 9
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