位置：成果数据库 > 会议 > 会议详情页
TOTAL IONIZING DOSE EFFECT INVESTIGATED BY IN-SITU MEASUREMENTS FOR A 65NM FLASH TECHNOLOGY
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：14th IEEE International Conference on Solid-State and Integrated Circuit Technology（ICSICT2014)
  • 时间：2014.10.28
  • 成果类型：会议
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
同会议论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
同项目会议论文
Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-situ E
An simple approach to evaluate TID response in high voltage MOSFET for 65nm flash technology
Investigation of charge loss mechanisms in 3D TANOS cylindricai junction-less charge trapping memory
Reducing Formation Time of the Inversion Layer by Illumination around a Memory Capacitor
High Performance MAHAHOS Memory Devices--Charge Trapping and Distribution in Bandgap Engineered Stru
High performance MAHAHOS memory devices: Charge trapping and distribution in bandgap engineered stru
Optimized HfO2 Atomic layer depositiion process for high performane Charge Trapping flash memory app
Bandgap engineering and HfAlO deposition control for trapping layer
A PAGE BUFFER DESIGN BASED ON STABLE AND AREA-SAVING EMBEDDED SRAM FOR FLASH APPLICATIONS
PROGRAM CHARGE EFFECT ON RANDOM TELEGRAPH NOISE BEHAVIOR IN MULTI-LEVEL FLOATING GATE FLASH MEMORY
MODELING AND ANALIZING OF CHIP LEVEL CIRCUIT DESIGN FOR 3D-STACKABLE NAND FLASH MEMORY
Performance optimization for MANOS by using pre-treatment of plasma oxygenic ions
Investigation on Interface Related Charge Trapping Capability in Bandgap Engineering High-k Based Ch
Improved Performance of Nanocrystal Memory Embedded with Au-Al2O3 Core-shell Nanoparticles