位置：成果数据库 > 会议 > 会议详情页
Fabrication and electrical characterization of MONOS memory with novel high-k gate stack
  • 所属机构名称：华中科技大学
  • 会议名称：IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC）
  • 成果类型：会议
  • 相关项目：小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
作者： L. Liu|J. P. Xu|C. L. Chen|P. T. Lai|
同会议论文项目
小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
期刊论文 14 会议论文 5
同项目会议论文
Comparative study of high-k HfLaON and HfON as charge-storage layer of MONOS memory
Comparative study of high-k HfLaON and HfON as charge-storage layer of MONOS memory
Comparative study of high-k HfLaON and HfON as charge-storage layer of MONOS memory
Comparative study of high-k HfLaON and HfON as charge-storage layer of MONOS memory