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Design of a novel dual pathway esd protection device using ISE-TCAD
  • 所属机构名称：西安电子科技大学
  • 会议名称：2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits,
  • 成果类型：会议
  • 会场：Suzhou, China
  • 相关项目：半导体器件与电路的“响应型”损伤机理与实验研究
作者： Zhang, Bing|Ding, Ruixue|Xi, Xiaowen|Chai, Changchun|
同会议论文项目
半导体器件与电路的“响应型”损伤机理与实验研究
期刊论文 34 会议论文 7 专利 2
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