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Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1-xNx thin f
  • 所属机构名称：长春理工大学
  • 会议名称：2012 International Conference on Optoelectronics and Microelectronics (ICOM)
  • 时间：2012
  • 成果类型：会议
  • 相关项目：高功率、高光束质量、波长稳定VBG外腔线阵半导体激光器
作者： Duanyuan Bai|Zhongliang Qiao|Xin Gao|Baoxue Bo|
同会议论文项目
高功率、高光束质量、波长稳定VBG外腔线阵半导体激光器
期刊论文 38 会议论文 8
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