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Effects of film thickness on resistive switching characteristics of ZnO based ReRAM
  • 所属机构名称：杭州电子科技大学
  • 会议名称：2nd International Conference on Materials Science and Manufacturing, ICMSM 2013
  • 时间：2013
  • 成果类型：会议
  • 相关项目：金属氧化物ReRAM的稳定性和可靠性研究
作者： Xi, Jun Hua|Chen, Xue Ping|Li, Hong Xia|Zhang, Jun|Ji, Zhen Guo|
同会议论文项目
金属氧化物ReRAM的稳定性和可靠性研究
期刊论文 21 会议论文 7 专利 9 著作 1
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