位置：成果数据库 > 会议 > 会议详情页
High quality AlN films grown by pulsed atomic-layer epitaxy.
  • 所属机构名称：华中科技大学
  • 会议名称：2007 Proc. of SPIE 6782-Optoelectronic Materials and Devices II
  • 成果类型：会议
  • 相关项目：基于选择共振腔的单片集成白光LED芯片新方案研究
作者： Zhihao Wu|Qiang Zhang|Changqing Chen|Hu Wang|Qinghua He|Ruofei Xiang|Jiangnan Dai|
同会议论文项目
基于选择共振腔的单片集成白光LED芯片新方案研究
期刊论文 19 会议论文 10 专利 6
同项目会议论文
Theory study of AlInGaN quantum well with different barriers
Resonant-cavity based monolithic white light-emitting diode
Self-Assembled InAs/GaAs Quantum Dot Molecules with InxGa1-xAs Strain-Reducing Layer
High quality a-plane GaN layers grown by pulsed atomic-layer epitaxy on r-plane sapphire substrates
Gain spectrum control in Multi-Electrode Semiconductor Optical Amplifiers
AlxGa1-xN/InyGa1-yN DBR Resonant-cavity based Monolithic White LED
Effects of the Al composition in AlGaN buffer layer on a-plane GaN films grown on r-plane sapphire s
Chirp Characteristics of Wavelength Converter in Multi-electrode Semiconductor Optical Amplifiers
The design of back surface field layer for a single GaAs solar cell