位置：成果数据库 > 会议 > 会议详情页
Transient response of bipolar transistor under intense electromagnetic pulse on collector
  • 所属机构名称：西安电子科技大学
  • 会议名称：2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits,
  • 成果类型：会议
  • 会场：Suzhou, China
  • 相关项目：半导体器件与电路的“响应型”损伤机理与实验研究
作者： Chai, Changchun|Xi, Xiaowen|Ren, Xingrong|Yang, Yintang|Zhang, Bing|
同会议论文项目
半导体器件与电路的“响应型”损伤机理与实验研究
期刊论文 34 会议论文 7 专利 2
同项目会议论文
The effect of passive component damage of an integrated Si bipolar low-noise amplifier under energy-
A package method for reducing bus crosstalk in full chip ESD protection circuit
The influence of package thermal resistance on the EMP injection damage effect of transistors
Experimental Study on Energy Injection Damage of a GaAs Low Noise Amplifier with and without DC Bias
A Novel ESD Protection Circuit Applied in High-speed CMOS IC
Design of a novel dual pathway esd protection device using ISE-TCAD