位置：成果数据库 > 会议 > 会议详情页
Resistive switching characteristics of hafnium oxide with Cu doping for nonvolatile memory applicati
  • 所属机构名称：中国科学院微电子研究所
  • 成果类型：会议
  • 相关项目：面向SOC的高性能纳米硅单电子器件研究
同会议论文项目
面向SOC的高性能纳米硅单电子器件研究
期刊论文 39 会议论文 13 著作 1
同项目会议论文
Nonvolatile resistive switching characteristics of HfO2 with Cu doping
Nanocrystal Non-Volatile Memories: Simulation, Fabrication and Characteristics
Analysis of Charge Retention Characteristics for Metal and Semiconductor Nanocrystal Non-volatile Me
A Hybrid Method For Fabrication of Au Nanocrystals Nonvolatile Memory
Performance Improvement of Metal Nanocrystal Memory with High-κ Tunneling Dielectric
Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling.
Impact of control dielectric layer on nanocrystals floating gate memory device
Fabrication and characterization of single electron transistor on SOI
Effects of Quantized Energy Levels of QDs confined in Asymmetric Barriers within Silicon Nanowire Tr
Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile
Excellent Resistive Switching Characteristics of Cu doped ZrO2 and its 64 bit Cross-point Integratio
A?hybrid?method?for?novel?nonvolatile?memory