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Improvement of electrical properties of p-type Al0.14Ga0.86N/GaN superlattices by inserting an AlN i
  • 所属机构名称：北京大学
  • 会议名称：International Conference on Superlattices, Nano-Structures and Nano-Devices (ICSNN2010)
  • 成果类型：会议
  • 会场：北京
  • 相关项目：氮化镓基量子异质结构和发光性质
作者： Ding Li|Lei Liu|Lei Wang|Rui Li|Xiaodong Hu|Ningyang Liu|
同会议论文项目
氮化镓基量子异质结构和发光性质
期刊论文 21 会议论文 9
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