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Experiment and Simulation of Transistor Level Fault model of IDDT Test
  • 所属机构名称：电子科技大学
  • 会议名称：2009 IEEE International Conference on Applied Superconductivity and Electromagnetic Devices(ASEMD)
  • 成果类型：会议
  • 相关项目：片上网络（NoC）的时延与串扰测试方法及可测试性设计模型
作者： Shuyan Jiang|
同会议论文项目
片上网络（NoC）的时延与串扰测试方法及可测试性设计模型
期刊论文 12 会议论文 8 专利 2
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Experiment and Simulation of Transistor Level Fault model of IDDT Test