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A Reliability Model for CMOS Circuit Based on Device Degradation
  • 所属机构名称：复旦大学
  • 会议名称：ICSICT
  • 时间：2012.10.10
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： J. Peng| G. F. Jiao| D. M. Huang| and M. F. Li|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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