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High voltage degradation of GaN high electron mobility transistors with AlGaN back barrier on SiC su
  • 所属机构名称：中国科学院微电子研究所
  • 会议名称：2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST
  • 成果类型：会议
  • 相关项目：GaN基毫米波功率器件与材料基础与关键技术研究
作者： Wang, Xinhua1|Wang, Xinhua1|Pang, Lei1|Pang, Lei1|Wang, Jianhui1|Wang, Jianhui1|Yuan, Tingting1|Yuan, Tingting1|Luo, Weijun1|Luo, Weijun1|Chen, Xiaojuan1|Chen, Xiaojuan1|Liu, Xinyu1|Liu, Xinyu1|
同会议论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
同项目会议论文
Thermal analysis of AlGaN/GaN High-Electron-Mobility Transistors by infrared microscopy
Thermal analysis of AlGaN/GaN High-Electron-Mobility Transistors by infrared microscopy
Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects
Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects
High voltage degradation of GaN high electron mobility transistors with AlGaN back barrier on SiC su
Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs
Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs