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Improved Characteristics of 4H-SiC MESFETs With Partly P-type doped Space Layer
  • 所属机构名称：电子科技大学
  • 会议名称：2009 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies For Wirele
  • 成果类型：会议
  • 相关项目：MMIC左手传输线宽带功率分配/合成技术研究
作者： Huang, Wen|Guo, Yunchuan|Xu, Yuehang|Zheng, Wei|Xu, Ruimin|
同会议论文项目
MMIC左手传输线宽带功率分配/合成技术研究
期刊论文 5 会议论文 22
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