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Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis
  • 所属机构名称：北京大学
  • 会议名称：13th International Symposium on Quality Electronic Design, ISQED 2012
  • 时间：2012
  • 成果类型：会议
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Huang, Xin|Zhang, Tianwei|Wang, Runsheng|Liu, Changze|Liu, Yuchao|Huang, Ru|
同会议论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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