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基于I-V特性的阻变存储器的阻变机制研究
  • 期刊名称：微纳电子技术
  • 时间：0
  • 页码：-
  • 分类：TN304.21[电子电信—物理电子学] TP333.8[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029, [2]兰州大学物理科学与技术学院微电子研究所,兰州730000, [3]安徽大学电子科学与技术学院,合肥230039
  • 相关基金：国家高技术研究发展计划（863计划）资助项目（2008AA031403）;国家重点基础研究发展计划（973计划）资助项目（2006CB302706）;国家自然科学基金资助项目（60825403,90607022,60506005）
  • 相关项目：纳米加工与新型半导体器件研究
作者： 李颖弢|刘肃|刘明|龙世兵|刘琦|张森|王艳|左青云|王琴|胡媛|
关键词： 阻变存储器, 非挥发性存储器, I-V特性, 阻变机制, 工作原理, RRAM, nonvolatile memory, I-V characteristics, resistance switching mechanisms, operation principle
中文摘要：

随着器件尺寸的缩小，阻变存储器（RRAM）具有取代现有主流Flash存储器成为下一代新型存储器的潜力。但对RRAM器件电阻转变机制的研究在认识上依然存在很大的分歧，直接制约了RRAM的研发与应用。通过介绍阻变存储器的基本工作原理、不同的阻变机制以及基于阻变存储器所表现出的不同I-V特性，研究了器件的阻变特性；详细分析了阻变存储器的五种阻变物理机制，即导电细丝（filament）、空间电荷限制电流效应（SCLC）、缺陷能级的电荷俘获和释放、肖特基发射效应（Schottky emission）以及普尔-法兰克效应（Pool—Frenkel）；同时，对RRAM器件的研究发展趋势以及面临的挑战进行了展望。

英文摘要：

With the conventional memories approaching their scaling limits in recent years, the nonvolatile resistive random access memory （RRAM） device is considered as one of the promising candidates of next-generation memories for possibly replacing the flash memory. However, the detailed switching mechanisms are not yet clearly understood, which is a direct constraint for the application of RRAM. Therefore, an overview of RRAM devices is presented, including the development status, basic operation principle and resistive switching mechanisms. Based on different I-V characteristics, these mechanisms are mainly divided into conduction filament, space charge limited conduction, trap charging and discharging, Schottky emission and Pool-Frenkel emission. Meanwhile, the future research directions and challenges of RRAM memories are analysed.

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