文章简要介绍了高分辨电子显微学方法和电子能量损失谱的进展.文中特别指出,随着电子显微技术的发展,原子分辨电子显微图像对结构问题的深入研究有重要作用.装备有能量单色器的新一代电子显微镜,可以直接给出高能量分辨率的电子能量损失谱(优于0.1eV).这些先进技术方法的应用,推动了晶体结构学、材料科学、物理学、纳米科学及生命科学的发展,也为解决很多重要结构问题奠定了基础.文章重点讨论了几个典型功能材料体系的结构问题:利用大角度会聚束电子衍射技术,分析了应变硅器件中的应变分布;利用原位电子显微技术,研究了新型电子铁电体LuFe2O4电荷序和物理性能的关系;深入探讨了强关联体系中电子关联效应对电子能量损失谱和电子结构的影响.
Recent progress in the field of high-resolution transmission electron microscopy(TEM) and electron-energy loss spectroscopy is briefly reviewed.It is emphasized that numerous significant structural issues in material science could be well addressed based on newly developed TEM techniques.For instance,strained-silicon p-type metal-oxide-semiconductor field effect transistors have been clearly studied by large angle convergent-beam electron diffraction,and considerable longitudinal compressive strain,up to 2.510,in the nanometer scale channel region has been revealed.Moreover,in-situ TEM observations clearly demonstrate the remarkable structural features of structural modulations in La(Sr)2MnO4 arising from charge order,and the direct connection between the ferroelectric polarization and charge-stripe order in LuFe2O4.