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Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy
  • ISSN号：1000-3290
  • 期刊名称：Acta Physica Sinica
  • 时间：2015.9.5
  • 页码：-
  • 相关项目：内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
作者： Li, Bao-Ji|Gu, Jun|Lu, Shu-Long|Ma, Zhong-Quan|
同期刊论文项目
内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
期刊论文 24
同项目期刊论文
A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy
Compositionally undulating step-graded InAsyP1-y buffers layer growth by metal-organic chemical vapo
The investigation of GaInP solar cell grown by all - solid MBE
Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Gr
Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
High quality non-rectifying contact of ITO with both Ni and n-type GaAs
0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded
Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilaye
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction
The investigation of GaInP solar cell grown by all-solid MBE
Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor
Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germa
Optimization of In0.68Ga0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically G
Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
room-temperature wafer bonded GaInP/GaAs/InGaAsP/InGaAs four-junction solar cell grown by all-solid
Solid-state tellurium doping of AlInP and its application to photovoltaic devices grown by molecular
Structure and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposit
Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy
基于金属背支撑刻蚀技术的柔性AlGaInP／AlGaAs／GaAs三结太阳电池研制
基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究
A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876