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Rectifying Switching Characteristics of PtanO/Pt Structure Based Resistive Memory
  • ISSN号：1533-4880
  • 期刊名称：Journal of Nanoscience and Nanotechnology
  • 时间：0
  • 页码：7088-7091
  • 语言：英文
  • 相关项目：超薄梯度Zr/ZrN自形成扩散阻挡层特性研究
作者： Song, ZX|Wang, JF|Xu, KW|Liu, M|
同期刊论文项目
超薄梯度Zr/ZrN自形成扩散阻挡层特性研究
期刊论文 16 会议论文 3
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