尽管阶段变化记忆技术在过去的二十年急速地发展了,关键切换材料的认知仍然忽视一个重要成员,以脸为中心的立方的 Sb 2 Te 3 。除了著名平衡六角形的 Sb 2 Te 3 水晶,我们证明亚稳的以脸为中心的立方的 Sb 是 2 Te 3 阶段确实存在。如此的亚稳的晶体包含随机占据 cationic 格子地点的空缺的大集中。以脸为中心对 Sb 2 Te 3, 由空缺聚集伴随了,与 Ge 2 Sb 2 Te 5 合金。我们证明像共有原子价的契约在亚稳的 Sb 2 Te 3 水晶,从理想的反响的特征背离。如果一种合适的做技术被采用,亚稳的 Sb 2 Te 3 阶段能为认识到 reversibly 快速、低精力的阶段变化存储器应用程序是有希望的。我们的学习可以在新奇阶段变化材料的设计提供新卓见进商品化的 Ge-Sb-Te 系统和帮助增加阶段变化存储器设备的表演。
Although phase change memory technology has developed drastically in the past two decades, the cognition of the key switching materials still ignores an important member, the face-centered cubic Sb2Te3. Apart from the well-known equilibrium hexagonal Sb2Te3 crystal, we prove the metastable face-centered cubic Sb2Te3 phase does exist. Such a metastable crystal contains a large concentration of vacancies randomly occupying the cationic lattice sites. The face-centered cubic to hexagonal phase transformation of Sb2Te3, accompanied by vacancy aggregation, occurs at a quite lower temperature compared to that of Ge2Sb2Te5 alloy. We prove that the covalent-like bonds prevail in the metastable Sb2Te3 crystal, deviating from the ideal resonant features. If a proper doping technique is adopted, the metastable Sb2Te3 phase could be promising for realizing reversibly swift and low-energy phase change memory applications. Our study may offer a new insight into commercialized Ge-Sb-Te systems and help in the design of novel phase change materials to boost the performances of the phase change memorv device.