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Direct observation of metastable face-centered cubic Sb2Te3 crystal
  • ISSN号:1009-5896
  • 期刊名称:《电子与信息学报》
  • 时间:0
  • 分类:O[理学]
  • 作者机构:[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [2]International Laboratory of Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
  • 相关基金:This work was supported by the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDA09020402), National Integrate Circuit Research Program of China (No. 2009ZX02023-003), National Natural Science Foundation of China (Nos. 61076121, 61176122, 61106001, 61261160500, and 61376006), Science and Technology Council of Shanghai (Nos. 13ZR1447200 and 13DZ2295700). The supercomputer time was provided by the National Supercomputer Center in Tianjin, and the calculations were performed on TianHe-1 (A).
中文摘要:

尽管阶段变化记忆技术在过去的二十年急速地发展了,关键切换材料的认知仍然忽视一个重要成员,以脸为中心的立方的 Sb 2 Te 3 。除了著名平衡六角形的 Sb 2 Te 3 水晶,我们证明亚稳的以脸为中心的立方的 Sb 是 2 Te 3 阶段确实存在。如此的亚稳的晶体包含随机占据 cationic 格子地点的空缺的大集中。以脸为中心对 Sb 2 Te 3, 由空缺聚集伴随了,与 Ge 2 Sb 2 Te 5 合金。我们证明像共有原子价的契约在亚稳的 Sb 2 Te 3 水晶,从理想的反响的特征背离。如果一种合适的做技术被采用,亚稳的 Sb 2 Te 3 阶段能为认识到 reversibly 快速、低精力的阶段变化存储器应用程序是有希望的。我们的学习可以在新奇阶段变化材料的设计提供新卓见进商品化的 Ge-Sb-Te 系统和帮助增加阶段变化存储器设备的表演。

英文摘要:

Although phase change memory technology has developed drastically in the past two decades, the cognition of the key switching materials still ignores an important member, the face-centered cubic Sb2Te3. Apart from the well-known equilibrium hexagonal Sb2Te3 crystal, we prove the metastable face-centered cubic Sb2Te3 phase does exist. Such a metastable crystal contains a large concentration of vacancies randomly occupying the cationic lattice sites. The face-centered cubic to hexagonal phase transformation of Sb2Te3, accompanied by vacancy aggregation, occurs at a quite lower temperature compared to that of Ge2Sb2Te5 alloy. We prove that the covalent-like bonds prevail in the metastable Sb2Te3 crystal, deviating from the ideal resonant features. If a proper doping technique is adopted, the metastable Sb2Te3 phase could be promising for realizing reversibly swift and low-energy phase change memory applications. Our study may offer a new insight into commercialized Ge-Sb-Te systems and help in the design of novel phase change materials to boost the performances of the phase change memorv device.

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期刊信息
  • 《电子与信息学报》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院电子学研究所 国家自然科学基金委员会信息科学部
  • 主编:朱敏慧
  • 地址:北京市北四环西路19号
  • 邮编:100190
  • 邮箱:jeit@mail.ie.ac.cn
  • 电话:010-58887066
  • 国际标准刊号:ISSN:1009-5896
  • 国内统一刊号:ISSN:11-4494/TN
  • 邮发代号:2-179
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  • 被引量:24739