中文摘要：

基于Vlkulov等人对金属／多孔硅／硅结构输运特性的研究，分析了载流子在金属／多孔硅／硅结构中的输运过程，研究了各层中电场强度以及电压的分布，讨论了镜像势在正反向偏压下对金属／多孔硅／硅结构Ⅰ-Ⅴ特性的影响。结果表明：金属／多孔硅／硅结构中电流主要受表面态电荷和界面层影响，改变多孔硅层厚度将导致各层中电压的重新分布，不管是正向偏压还是反向偏压，电流随厚度的增加而减小；镜像势在正向偏压时对电流的影响可以忽略，但随反向偏压增大镜像势对电流的影响越来越大。

英文摘要：

Based on the influence of mirror image potential onⅠ-Ⅴcharacteristic, the carrier transport process and the voltage drop distribution in metal/porous silicon/silicon structure are analyzed and discussed. The results indicate that the current is mainly influenced by the charge of surface state and the interfacial layer in the metal/porous silicon/silicon structure, and the voltages in every layer redistribute with the thickness of porous silicon layer, and the current decreases with the thickness increase, regardless of forward or reverse bias voltage. The influence of mirror image potential on current can be neglected when the structure is applied with forward bias voltage, but it becomes more and more important with the reverse bias voltage increasing.