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Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film
  • ISSN号：0361-5235
  • 期刊名称：Journal of Electronic Materials
  • 时间：2010.10.10
  • 页码：2243-2247
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Wang, Fuxue|Lu, Hai|Xiu, Xiangqian|Chen, Dunjun|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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