中文摘要：

有高效率和亮度的一台器官的轻射出的二极管(OLED ) 设备被插入 CuO 制作 < 潜水艇 class= “ a-plus-plus ” > x /Cu 在 indium-tin-oxide (ITO ) 之间的双无机的缓冲区层和洞运输层(HTL ) 。CuO < 潜水艇 class= “ a-plus-plus ” > x /Cu 缓冲区层显然限制操作当前的密度，当亮度和效率两个都极大地被提高时。优化设备的最高的亮度被完成是 14 000 cd/m <啜class=“ a-plus-plus ”>在 3 cd/A 的当前的效率和 15 V 的偏爱电压的 2 ，没有 CuO ，它比比较设备的高是大约50%<潜水艇class=“ a-plus-plus ”> x /Cu 缓冲区层。最高的效率被完成是在有 3 400 cd/m 的 11.6 V 的 5.9 cd/A < 啜 class= “ a-plus-plus ” > 象比较设备的一样几乎两次高的 2 , 。

英文摘要：

An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.