欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
从保持力失效时间的角度出发，对相变存储器实施了保持力加速寿命实验。实验过程中发现，在比较高的温度下，随着测试时间的增长，存储器单元的RESET阻值会逐渐变小。这个现象符合Arrhenius模型。而且，温度越高，失效时间越短。不同初始 RESET 阻值条件下的阻值分布曲线也验证了通过增加非晶区域的有效体积可以改善保持力可靠性。不同存储器单元的失效时间分布也验证了一个假设：若在非晶区域中本来就存在晶粒，则晶粒生长重组会缩短失效时间；若是晶化过程发生在非晶区域和结晶区域的边界处，失效时间会明显增长。
英文摘要：
An acceleration test was carried out to have a deeper understanding on retention characterization of failure time in phase change memory. As the time flows, the resistance would decrease under a high temperature, which can also be induced from the Arrhenius model. The higher the temperature, the shorter the failure time. The distributions for different values of initial RESET resistance suggested that improving the active volume of chalcogenide amorphous region will be beneficial for the retention reliability. The failure time distribution of different cells also represent a hypothesis that the grain growth with nucleation existing in the amorphous region induces a shorter time, while the grain growth at the boundary between amorphous/crystalline regions induces a longer one.
同期刊论文项目
同项目期刊论文
Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change mater
Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory applicati
Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memor
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
期刊信息
位置：