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Direct Atomic-Scale Imaging about the Mechanisms of Ultralarge Bent Straining in Si Nanowires
  • ISSN号：1530-6984
  • 期刊名称：Nano Lett.
  • 时间：2011.5.5
  • 页码：2382-2385
  • 相关项目：半导体纳米线/薄膜应力加载下结构演变及电学性能的研究
作者： Lihua Wang|Kun Zheng|Ze Zhang|Xiaodong Han|
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半导体纳米线/薄膜应力加载下结构演变及电学性能的研究
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