欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–orga
ISSN号:1466-8033
期刊名称:CrystEngComm
时间:0
页码:4728-4731
相关项目:GaN单晶衬底及其同质外延的研究
作者:
Hao Long|Yang Wei|Tongjun Yu|Zhe Wang|Chuanyu Jia|Zhijian Yang|Guoyi Zhang|
同期刊论文项目
GaN单晶衬底及其同质外延的研究
期刊论文 8
专利 4
同项目期刊论文
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by m
Lattice-parameter effects on diffracted transmission of GaN two-dimensional square-lattice photonic
Lattice constant effects of photonic crystals on the extraction of guided mode of GaN based light em
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition