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电化学制备多孔硅的工艺对其形貌的影响
  • ISSN号：1005-5630
  • 期刊名称：《光学仪器》
  • 时间：0
  • 分类：TN29[电子电信—物理电子学]
  • 作者机构：[1]上海理工大学上海市现代光学系统重点实验室,上海200093, [2]上海理工大学光电信息与计算机工程学院,上海200093
  • 相关基金：上海市重点学科项目第三期（$30502）;国家973计划（2012cB9342（）（））;国家自然科学基金资助项目（61007059,11104186,61138001.11174207）
作者： 单燕[1,2], 徐伯庆[2], 陈麟[1,2]
关键词： 电化学, 多孔硅形貌, N型硅
中文摘要：

采用电化学腐蚀方法，将不同比例的乙醇和质量分数为40％的氢氟酸混合，并以此混合液为腐蚀液，在光照条件下，制备了N型轻掺杂的多孔硅。讨论了不同电化学腐蚀条件对多孔硅结构的影响。研究表明，电流密度、腐蚀时间和氢氟酸质量分数越大时，制备的多孔硅越深，孔径也越大，当以上三者数值过大时会导致多孔硅机械强度急速减弱。由表面形貌可知，当多孔层孔径小于500nm时其机械强度良好，当孔径超过这一阈值尤其是大于800nm时，多孔层骨架则极易断裂。

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期刊信息
  • 《光学仪器》
  • 主管单位:中国科学技术协会
  • 主办单位:上海光学仪器研究所 中国仪器仪表学会光 中国光学学会工程光学专业委员会
  • 主编：
  • 地址：上海市军工路516号
  • 邮编：200093
  • 邮箱：gxyq@chinajournal.net.cn
  • 电话：021-55270110
  • 国际标准刊号：ISSN：1005-5630
  • 国内统一刊号：ISSN：31-1504/TH
  • 邮发代号:
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  • 被引量:3858