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Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN312.8[电子电信—物理电子学] O657.31[理学—分析化学;理学—化学]
  • 作者机构：[1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China, [2]Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1 O0190, China
  • 相关基金：Project supported by the National High Technology Research and Development Program of China （Grant Nos. 2011AA03A112, 2011AA03AI06, and 2013AA03A101）, the National Natural Science Foundation of China （Grant Nos. 11204360, 61210014, and 61078046）, the Science and Technology In- novation Program of Department of Education of Guangdong Province, China （Grant No. 2012CXZD0017）, the Industry-Academia Research Union Special Fund of Guangdong Province, China （Grant No. 2012B091000169）, and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China （Grant No. 2012B090600038）.
作者： 王波[1,2], 宿世臣[1], 何苗[1], 陈弘[2], 吴汶波[1], 张伟伟[1], 王巧[1], 陈虞龙[1], 高优[1], 张力[1], 朱克宝[1], 雷严[1]
关键词： 电感耦合等离子体, 发光二极管, 反应离子刻蚀, GaN, 侧壁, 咬边, 制造, 反应离子蚀刻, GaN, light-emitting diode （LED）, undercut
中文摘要：

We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Our experiment results show that the output powers of the LEDs with 22?undercut sidewalls are 34.8 mW under a 20-mA current injection,6.75% higher than 32.6 mW,the output powers of the conventional LEDs under the same current injection.

英文摘要：

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406