中文摘要：

利用等离子体增强化学气相沉积（PECVD）技术,以硅烷、硼烷、氢气为气源,在玻璃衬底上沉积氢化菲晶硅薄膜.分析了气体的压强和射频功率两个参数对薄膜的沉积速率、折射率和晶化程度的影响.载流子的浓度随着射频功率的增加呈现先增加后下降的趋势;随着压强的增加,载流子的浓度出现先下降后增加的趋势;压强和射频功率对载流子迁移率的影响与对浓度的影响趋势相反.多次沉积薄膜后真空室的环境也对非晶硅薄膜的性质,如折射率、薄膜厚度、载流子浓度等造成影响。

英文摘要：

Hydrogenated amorphous silicon thin films were deposited on glass substrates by plasma enhanced chemical vapor deposition （PECVD）,using SiH4,B2 H6,and H2.The deposition rate,refractive index and degree of crystallization were studied based on the pressure and the RF power.The concentration and mobility of the carrier were also affected by the pressure and the RF power.The mobility of the carrier first increased and then decreased with power,while a reversed trend was obtained on the dependence of concentration with deposition pressure.In addition,the properties of the film,such as the film refractive index,the film thickness,and bulk concentration,were also affected by the environment of the deposition chamber.