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The suppression of background doping in selective area growth technique for high performance normall
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2015.12
  • 页码：9753-9758
  • 相关项目：常关型宽禁带氮化镓MOS场效应晶体管的研究
作者： Zhong Jian|Wu,Zhisheng|Zhang Baijun|Liu Yang|
同期刊论文项目
常关型宽禁带氮化镓MOS场效应晶体管的研究
期刊论文 31 专利 7
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