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快速热处理多孔硅的蓝光发射
  • 期刊名称：科学通报，Vol.51,No.17, 2006.9, P.2091- - 2093
  • 时间：0
  • 分类：TN305[电子电信—物理电子学]
  • 作者机构：[1]浙江大学硅材料国家重点实验室,杭州 310027, [2]东京大学材料系,东京113-8656
  • 相关基金：本工作得到国家自然科学基金（批准号：60225010）资助.
  • 相关项目：半导体材料
作者： 赵毅，杨德仁，林磊，阙端麟
关键词： 多孔硅, 蓝光发射, 快速热处理
中文摘要：

对多孔硅样品进行了各种气氛下（氮气，氩气，氧气和空气）的快速热处理（rapid thermal process,RTP），测试了RTP处理前和处理后多孔硅样品的光致发光（PL）谱和傅里叶变换红外光谱（FTIR），在400℃以上RTP处理后的多孔硅样品的PL谱中有4个蓝光发射峰，峰的位置不随RTP处理温度和气氛改变而变化，由于RTP处理的氧化作用，减小了多孔硅中纳米硅粒的尺寸，使得PL谱中出现蓝光发射峰，从理论计算可以估算出硅粒尺寸和发光峰位置的关系，而且只有特定尺寸的硅粒才有可能出现，因此PL谱的峰的位置不随RTP温度和气氛而改变。

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