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Effects of V/III ratio on the growth of a-plane GaN films
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：O182.2[理学—数学;理学—基础数学] TN304.23[电子电信—物理电子学]
  • 作者机构：[1]Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
  • 相关基金：Project supported by the Special Funds for Major State Basic Research Project of China （Grant No. 2011CB301900）, High Technology Research Program of China （Grant No. 2009AA03A198）, the National Natural Science Foundation of China （Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003）, the Natural Science Foundation of Jiangsu Province of China （Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178）, and the Research Funds from NJU- Yangzhou Institute of Opto-electronics, China.
作者： Xie Zi-Li Li Yi Liu Bin Zhang Rong Xiu Xiang-Qian Chen Peng ZhengYou-Liao[1]
关键词： GAN薄膜, III, 直接生长, 平面, 化学气相沉积, 原子力显微镜, 晶体结构分析, 表面形貌, V/III ratio, a-plane GaN, non-polar, metal-organic chemical vapour deposition
中文摘要：

Corresponding author. E-maih xzl@nju.edu.cn

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AlN/Si（1111）复合衬底上4H—SiC 薄膜的异质外延研究
4H-Si1-yCy 合金的生长和特性
AlN/Si(111)衬底上4H-SiC 的CVD 外延生长研究
Catalysis of dispersed silver particles on directional etching of silicon
Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xS
Signals for Specular Andreev Reflection
Room-Temperature Ferromagnetism in Mn-N Co-doped p-ZnO Epilayers by MOCVD
Pr3+ photoluminescence in ferroelectric (Ba0.77Ca0.23)TiO3 ceramics: sensitive to polarization and p
生长温度对Si1-xGex:C 薄膜外延生长的影响
Self-organized formation of silver nanowires, nanocubes, and bipyramids via a solvothermal method
Mg掺杂AlGaN的特性研究
Double-side fabrication process and millimeter wave response of intrinsic Josephson junctions
MOCVD外延生长a面GaN薄膜及其面内各向异性研究
a面GaN阴极荧光激发强度特性的研究
生长温度对AlGaInN四元合金薄膜性质的影响
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
m面GaN平面内结构和光学各向异性研究
Chemical mechanical polishing of freestanding GaN substrates
Mn掺杂GaN基稀磁半导体材料制备和特性研究
采用高分辨XRD对m面GaN位错特性的研究
氢化物气相外延生长的GaN厚膜中位错密度计算
PECVD法氮化硅薄膜生长工艺的研究
薄膜材料研究中的XRD技术
阳极多孔氧化铝的斜孔形成过程及机理
阳极氧化法制备氧化铝纳米线
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO2 substrate
亚波长孔阵列的太赫兹波异常透射研究
Nb5N6 thin film on silicon and silicon oxide： A good material for terahertz detection
基于铌超导隧道结的亚毫米波直接检测器
磷化铟（InP）在太赫兹波段的特性研究
双栅调控的硅量子线中的库仑振荡效应
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响
MOCVD生长Mn掺杂GaN薄膜的结构与磁学性能研究
GaN转移电子器件的性能与基本设计
AlN/Si(111)衬底上4H-SiC的CVD外延生长研究
Detection of infrared photons with a superconductor
红橙光InGaN/GaN量子阱的结构与光学性质研究
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
GaN纳米柱的量子效率研究
氢化物气相外延生长的GaN膜中的应力分析
InGaN/GaN多量子阱蓝光发光二极管老化过程中的光谱特性
氮气载气流量和系统温度对GaN膜质量的影响
Fe/GaN、Fe_3N/GaN的生长及其性能研究
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN纳米柱发光特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
氢化物气相外延生长高质量GaN膜生长参数优化研究
紫外波段SiO2／Si3N4介质膜分布式布拉格反射镜的制备与研究
GaN nanopillars with a nickel nano-island mask
氢化物气相外延生长GaN膜性质研究
背势垒对InAlN/GaN异质结构中二维电子气的影响
用氢化物气相外延（HVPE）法生长的氮化铟薄膜的性质研究
高速InP基半导体电光调制器行波电极结构研究
基于高速EAM集成光源的微波光纤传输链路
基于烟囱效应的集成封装半导体照明光源散热结构优化设计
高饱和电流光电探测器在低噪声系数和高增益RoF光链路中的应用
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
倒装焊对探测器频响特性影响的理论分析及工艺优化
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Reverse leakage current in AIGaN-based ultraviolet light-emitting diodes
集成封装发光二极管光提取效率的计算及优化
Recent progresses on InGaN quantum dot light-emitting diodes
日盲雪崩探测器滤波膜系的优化设计及器件性能的影响
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406