位置：成果数据库 > 期刊 > 期刊详情页
Topological Criticality in the Chiral-Symmetric AIII Class at Strong Disorder
  • ISSN号：0031-9007
  • 期刊名称：Physical Review Letters
  • 时间：2014.7.23
  • 页码：-
  • 相关项目：拓扑绝缘体及其相关混合结构中电子输运性质研究
作者： Ian Mondragon-Shem|Taylor L. Hughes|Juntao Song|Emil Prodan|
同期刊论文项目
拓扑绝缘体及其相关混合结构中电子输运性质研究
期刊论文 13
同项目期刊论文
原胞间跃迁无序导致的拓扑安德森绝缘体
基于石墨烯线缺陷的可控谷极化
The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells
Disorder and Metal-Insulator Transitions in Weyl Semimetals
Building topological devices through emerging robust helical surface states
陈数为2的两带陈绝缘体中的量子相变
锑化汞/锑化镉拓扑绝缘体中的能斯特和塞贝克效应
Effect of strong disorder on three-dimensional chiral topological insulators: Phase diagrams, maps
AIII and BDI topological systems at strong disorder
Characterization of the quantized Hall insulator phase in the quantum critical regime
Transport through quantum wells and superlattices on topological insulator surfaces
Quantization of topological invariants under symmetry-breaking disorder