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Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc
ISSN号:0021-4922
期刊名称:Japanese Journal of Applied Physics
时间:2012.7
页码:076501-076501
相关项目:金属氧化物薄膜晶体管稳定性机理的研究
作者:
Xu, Hua|Luo, Dongxiang|Xiong, Nana|Peng, Junbiao|
同期刊论文项目
金属氧化物薄膜晶体管稳定性机理的研究
期刊论文 45
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金属氧化物薄膜晶体管及其在新型显示中的应用
Role of Rare Earth Ions in Anodic Gate Dielectrics for Indium-Zinc-Oxide Thin-Film Transistors
Simplified hybrid white organic light-emitting diodes with efficiency/efficiency roll-off/color rend
Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based
Regulating charges and excitons in simplified hybrid white organic light-emitting diodes: The key ro
金属氧化物TFT驱动AMOLED显示研究进展
The effect of spacer in hybrid white organic light emitting diodes
Simultaneous achievement of low roll-off and stable color in highly efficient single-emitting-layer
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Investigation and optimization of each organic layer: A simple but effective approach towards achiev
A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized
Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nano
Effects of Solvent Treatment on the Characteristics of InGaZnO Thin-Film Transistors
Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor
High-mobility thin film transistors with neodymium-substituted indium oxide active layer
Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-t
Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transist
Effects of Nd in NdxIn1-xO3 Semiconductors for Thin-Film Transistors
Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate ins
源漏电极的制备对氧化物薄膜晶体管性能的影响
具有新型双空穴注入层的有机发光二极管
低温溶液加工法制备氧化锌薄膜晶体管
氧化物薄膜晶体管研究进展
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Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers