中文摘要：

报道了在高偏置电压下半绝缘GaAs光导开关进入非线性模式并产生光电延迟的实验结果。分析了非线性模式下光电延迟现象,指出半导体材料深能级杂质的俘获作用是产生光电延迟的主要原因;计算了由于电荷畴传输引起的光电延迟时间,得到与实验相吻合的结果。

英文摘要：

The experimental results that the semi-insulating GaAs photoconductive switches will enter into a nonlinear mode and photoelectric delay will happen under a high biased voltage are reported.The photoelectric delay in the nonlinear mode is analyzed and the main reason for this phenomenon is pointed out to be the trapping effect of deep level impurities in semiconductor materials.Photoelectric delay time caused by charge domain transmission is calculated,which shows a conformance with the experimental results.