中文摘要：

利用Silvaco-TCAD半导体器件仿真软件对n型插指背接触（IBC）晶硅太阳电池衬底参数进行了优化,全面系统地分析了晶硅衬底厚度、电阻率、少子寿命对IBC太阳电池量子效率、短路电流、开路电压、转换效率的影响。结果表明：晶硅衬底少子寿命是影响IBC太阳电池性能的最主要因素。少子寿命越高,电池转换效率越高。当晶硅衬底电阻率为2Ω·cm,少子寿命为500μs时,最优的衬底厚度范围为60-65μm,IBC太阳电池转换效率约为22.5%。利用高质量晶硅材料制备IBC太阳电池时,可降低对衬底厚度的要求。当晶硅衬底厚度为150μm、少子寿命为500μs时,最优衬底电阻率为0.3Ω·cm,IBC太阳电池转换效率约为23.3%。少子寿命越低,IBC太阳电池最优的衬底电阻率越大。

英文摘要：

The substrate parameters of n-type interdigitated back contact（ IBC） crystalline silicon solar cell were optimized by using Silvaco-TCAD semiconductor device simulation software. The influences of thickness,resistivity and minority carrier lifetime of the crystalline silicon substrate on IBC solar cell ＇s quantum efficiency, short-circuit current, open-circuit voltage and conversion efficiency were analyzed comprehensively and systematically. The results show that the minority carrier lifetime of the crystalline silicon substrate is the most significant factor that influences IBC solar cells＇ performance.The longer the minority carrier lifetime,the higher the cell＇s conversion efficiency. When the crystalline silicon substrate resistivity is 2 Ω·cm and the minority carrier lifetime is 500μs,the optimal thickness range of the substrate is 60 - 65 μm and the conversion efficiency of IBC solar cell is about 22. 5%. So if IBC solar cell is prepared from the high quality crystalline silicon materials,the requirement of the substrate thickness can be lowered. When the substrate thickness is 150 μm and the minority carrier lifetime is 500 μs,the optimal substrate resistivity is 0. 3 Ω·cm and the conversion efficiency of IBC solar cell is about 23. 3%. The shorter the minority carrier lifetime,the higher the optimal substrate resistivity of IBC solar cell.