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中文摘要：
高速光探测器是高速光纤通信系统和网络中的关键器件,它要求光探测器具有宽的频率响应带宽和高量子效率。垂直入光型pin光探测器的高速性能和量子效率均受到吸收层厚度的限制。为了改善其高速性能,采用InGaAsP材料作为吸收层以及限制层渐变掺杂的方法,对垂直入光型pin光探测器的高速响应性能进行了理论研究和仿真,结果表明,高速响应达到了40GHz。与不采用渐变掺杂浓度的同种结构光探测器相比,高速响应性能显著提高。
英文摘要：
As the key device for high bit rate optical fiber communication systems and optical networks,high speed photodetectors require wide frequency bandwidth and high quantum efficiency simultaneously.Vertically illuminated p-i-n photodetector suffers such a tradeoff as the frequency response and quantum efficiency are both limited by the thickness of the absorption layer.To improve its high-speed performance,InGaAsP is used as the absorbing material and the cladding layer is graded doped.In this paper,the high speed response performance of the vertically illuminated p-i-n photodetector is optimized by theoretical studies and simulation analysis,and its 3 dB bandwidth reaches 40 GHz.Compared to the photodetector without applying graded doping,the high speed performance is significantly improved.
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