位置：成果数据库 > 期刊 > 期刊详情页
Fabrication of a monolithic 4H-SiC junction barrier schottky diodewith the capability of high curren
  • ISSN号：1674-7321
  • 期刊名称：Science China Technological Sciences
  • 时间：2015.7.16
  • 页码：1369-1374
  • 相关项目：HfAlO/4H-SiC MOSFETs功率器件研究
作者： 张玉明|宋庆文|
同期刊论文项目
HfAlO/4H-SiC MOSFETs功率器件研究
期刊论文 13 会议论文 2
同项目期刊论文
Fabrication and characterization of 4H-SiC Power UMOSFETs
具有Al2O3/SiO2 堆栈介质结构的4H SiC 金属绝缘层半导体结构的研究
铝离子注入到4H-SiC的表面粗糙度和离子激活研究
4H-SiC功率UMOSFETs制备与表征
Investigation of surface morphology and ion activation ofaluminium implanted 4H-SiC
4H-SiC trench gate MOSFETs with field plate termination
电荷失配对SiC半超结垂直双扩散金属氧化物半导体场效应管击穿电压的影响
Investigation of 4H SiC metal insulation semiconductorstructure with Al2O3/SiO2 stacked dielectric
4H_SiC PIN二极管的各向异性迁移率效应
Effect of atomic layer deposition growth temperature on the interfacial characteristicsof HfO2/p-GaA
Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors
1200V 4H-SiC结势垒肖特基二极管温度特性研究