中文摘要：

研究了p-i-n型和肖特基型Ga N基紫外探测器的响应光谱和暗电流特性。实验发现,随着p-Ga N层厚度的增加,p-i-n型紫外探测器的响应度下降,并且在短波处下降更加明显。肖特基探测器的响应度明显比pi-n结构高,主要是由于p-Ga N层吸收了大量的入射光所致。肖特基型紫外探测器的暗电流远远大于p-i-n型紫外探测器的暗电流,和模拟结果基本一致,主要是肖特基型探测器是多子器件,而p-i-n型探测器是少子器件。要制备响应度大、暗电流小的高性能Ga N紫外探测器,最好采用p-Ga N层较薄的p-i-n结构。

英文摘要：

The spectral response and dark current of p-i-n type and Schottky barrier Ga N-based ultraviolet detectors are investigated. It is found that the responsivity of p-i-n detectors decreases with increasing thickness of p-Ga N layer in p-i-n structure detectors,and the downward trend of responsivity is more pronounced at shorter wavelength of incident light. The responsivity of the Schottky barrier detector is obviously higher than that of the p-i-n structure,mainly because a lot of incident photons are absorpted in the p-Ga N layer. The dark current of Schottky barrier ultraviolet detectors is far larger than the p-i-n ultraviolet detectors,and the results are basically consistent with the simulations,mainly because the Schottky detectors are majority carrier devices,and p-i-n detectors are minority carrier devices. To fabricate high performance Ga N ultraviolet detectors,it is better to employ p-i-n structure with very thin p-Ga N layer.