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Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Bloc
  • ISSN号：1943-0655
  • 期刊名称：IEEE PHOTONICS JOURNAL
  • 时间：2013.8.8
  • 页码：-
  • 相关项目：非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
作者： Li, Yang|Chen, Shengchang|Tian, Wu|Wu, Zhihao|Fang, Yanyan|Dai, Jiangnan|Chen, Changqing|
同期刊论文项目
非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
期刊论文 13 会议论文 3
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