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中文摘要：
主要研究了Bi1.85In0.15Se3的晶体结构、微观形貌及电输运性能。样品具有六方层状结构，形成的晶体易解理。样品的电阻率曲线在低温区域出现了金属一绝缘体转变行为。拟合结果表明，在低温下电子一电子散射和Mott变程跃迁模式共存，Mott变程跃迁模式在低温下对电阻率贡献作用的增大，导致金属一绝缘体转变的出现’而在高温区域，声子散射及电离杂质散射对载流子的作用共存。当施加外加磁场时，样品出现了与纯Bi2Se3相反的负磁电阻效应。这种反常的磁电阻行为可能跟由洛仑兹力导致的正磁电阻与自旋无序电阻率减小引起的负磁电阻之间的竞争作用有关。
英文摘要：
The phase structure, electrical and magnetic transport properties of Bi1.85In0.15Se3 were studied. The sample with rhombohedral layered crystal structure can be cleaved easily. A metal-insulator （M-I） transition behaviour of resistivity was observed at low temperature region, which come from the contribution of the variable range transport mechanism. For high temperature region, the phonon scattering and the ionized impurities scattering effect were both existed. Magnetic-field-induced metal-insulator transitions were observed in the Bi1.85 Ino.15 Se3 sample with negative magnetoresistance （NMR）. The change in MR was related to the competition between lorentz force and the decreasing of spin disordered resistivity.
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